| 摘要 |
PURPOSE:To provide a reticular composite semiconductor device, having large degree of freedom in characteristics of arithmetic operation, for which many special manufacturing processes are not required. CONSTITUTION:The title composite semiconductor device is formed by interconnecting a MOS, type semiconductor device of the second-ary conduction SOI structure, as a circuit element of reticular circuit, and a general type MOS semiconductor device 6. The MOS type semiconductor devices 5 and 6 start action in accordance with the control signal inputted from a control terminal 7 based on the performance characteristics of themselves, and the prescribed arithmetic operational characteristics are formed. The signals inputted from terminals 1 and 2 are processed based on the arithmetic operational characteristics formed by the MOS type semiconductor devices 5 and 6, and they are outputted to terminals 3 and 4. |
