| 摘要 |
PURPOSE:To obtain an exposure technique with high transparency and little influence of reflected light by incorporating a specified chemically amplifying- type resist and a bleaching agent. CONSTITUTION:A chemically amplifying-type resist essentially comprising a base polymer and a photoacid producing agent and a bleaching agent added to the chemically amplifying-type resist are incorporated into the resist for far UV rays. By adding the bleaching agent together with the photo acid- producing agent, such an exposure technique that realizes high transparency and little influence of reflected light for far UV rays such as KrF excimer laser light can be obtd. Further, production of overhang structure of an aperture surface which is a problem for a chemically amplifying-type resist, can be decreased. The typical base polymer of the chemically amplifying-type resist is such polymers having an adamantyl skeleton and a vinylphenol skeleton. This kind of base polymers have high transparency and high durability against dry etching. |
