发明名称 SEMICONDUCTOR DEVICE AND FABRICATION THEREOF
摘要 PURPOSE:To allow easy formation of a contact hole even when the height from the surface of a semiconductor substrate to the upper surface of an interlayer insulation film increases due to high integration of a semiconductor device. CONSTITUTION:A wiring pad 12a is formed on an N well potential fixed region 6 and a contact hole 13c is made through an interlayer insulation film 13 deposited thereon.
申请公布号 JPH07122645(A) 申请公布日期 1995.05.12
申请号 JP19940165610 申请日期 1994.07.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 TANAKA KOJI;MIYAMOTO HIROSHI;YASUDA KENICHI;KIKUTA SHIGERU
分类号 H01L23/522;H01L21/768;H01L21/8242;H01L27/108;H01L29/78 主分类号 H01L23/522
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