发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION THEREOF |
摘要 |
PURPOSE:To allow easy formation of a contact hole even when the height from the surface of a semiconductor substrate to the upper surface of an interlayer insulation film increases due to high integration of a semiconductor device. CONSTITUTION:A wiring pad 12a is formed on an N well potential fixed region 6 and a contact hole 13c is made through an interlayer insulation film 13 deposited thereon. |
申请公布号 |
JPH07122645(A) |
申请公布日期 |
1995.05.12 |
申请号 |
JP19940165610 |
申请日期 |
1994.07.18 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
TANAKA KOJI;MIYAMOTO HIROSHI;YASUDA KENICHI;KIKUTA SHIGERU |
分类号 |
H01L23/522;H01L21/768;H01L21/8242;H01L27/108;H01L29/78 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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