发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To provide a liquid crystal indicating device with which a gate electrode can be made small as much as possible and the display picture quality can be improved without increasing a leak current in the OFF state of a thin film transistor. CONSTITUTION:In the liquid crystal indicating device provided with an array 24, where a plurality of TFT are formed by laminating a gate electrode 4, a gate insulating film, a semiconductor layer and a source/drain electrode on a transparent substrate 27, and an opposed substrate 25 where a light-shielding layer 29 is formed covering the TFT, which is opposingly arranged on the above-mentioned array substrate 24; the channel region 32 of the TFT is formed in a self-aligning manner with the electrode gate 14. The shortest distance from the point of intersection between the profile line of the gate electrode 14 and the profile line of the drain electrode to the point of intersection between the profile line of the gate electrode 14 and the source electrode is set at the value quadruple or more of the shortest distance from the gate electrode 14 to the light-shielding layer 29.
申请公布号 JPH07122754(A) 申请公布日期 1995.05.12
申请号 JP19930263749 申请日期 1993.10.21
申请人 TOSHIBA CORP 发明人 SUGAWARA ATSUSHI;MIURA YASUNORI;SHIBUSAWA MAKOTO;SEIKI MASAHIRO
分类号 G02F1/1343;G02F1/1335;G02F1/136;G02F1/1368;H01L21/336;H01L29/78;H01L29/786 主分类号 G02F1/1343
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