| 摘要 |
PURPOSE:To suppress the generation of dislocation called the slip of a body to be treated when performing heat treatment of the body to be treated such as a semiconductor wafer. CONSTITUTION:For example four posts 21-24 are buried to an annular support member 31 in peripheral direction for the contour of a wafer W at the same time an annular fixing member is provided so that the upper edge parts are fixed to constitute a wafer boat 2 and then the wafer W is placed on it in a shelf shape and is located into a reaction pipe 68. Secondary radiation occurs from the upper and lower edges of the wafer boat 2. However, since the member at both edges is annular, the amount of cooling is small and hence the amount of heat conduction to the upper and lower edges via the posts 21-24 from the wafer is small so that the temperature uniformity within the surface of the wafer is high and the thermal stress at the peripheral edge part is small. Also, the support of the wafer post 2 by a temperature-preservation cylinder 4 or that of the temperature-preservation cylinder by a lid body may be, for example, in three-point support, thus suppressing cooling toward a lower side. |
