| 摘要 |
PURPOSE:To increase the capacitance by forming a lower layer electrode having a plane rougher than a silicon film having large surface area thereby increasing the area of electrode. CONSTITUTION:The method for fabricating a semiconductor device comprises a step for depositing a first silicon doped heavily with impurities to form the lower layer electrode 8 for capacitor, a step for depositing a lightly doped second silicon 9 having larger surface area thereon, a step for removing the second silicon 9 having larger area by etching to roughen the surface of the lower layer electrode 8, and a step for forming an upper layer electrode 12 on the lower layer electrode 8 through capacitive insulation films 10, 11. |
