| 摘要 |
<p>PURPOSE:To provide a semiconductor nonvolatile memory in which a reading malfunction is prevented while data are read. CONSTITUTION:During a data reading, nonselective word lines are set to a minus voltage in a NOR type EEPROM. Thus, even though a threshold value voltage Vtho, which is in a data '0' condition, becomes a fluctuating depression condition by an excessive erasing, a nonselective memory cell transistor does not become an on condition and a reading malfunction is prevented.</p> |
