发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PURPOSE:To reduce the supply inductance noise of a semiconductor integrated circuit device, especially, QFP having a multilayered lead frame structure by fetching a power supply layer and ground layer in a package at low impedances. CONSTITUTION:An LSI 1 composed of a QFP having a multilayered lead frame structure. The LSI 1 has a semiconductor chip 2 incorporated in a package molded with a resin 7 and the connection pads of the chip 2 are respectively connected to a signal, power supply, and ground lead frames 3, 4, and 5 through wires 6. The lead frames 4 and 5 respectively have a power supply layer 11 and ground layer 14 and outer leads 12 and 15 having larger areas than the outer leads 9 of the lead frame 3 have are directly led out from the layers 11 and 14.</p>
申请公布号 JPH07122704(A) 申请公布日期 1995.05.12
申请号 JP19930263249 申请日期 1993.10.21
申请人 HITACHI LTD 发明人 KIMURA ICHIRO
分类号 H01L23/50;(IPC1-7):H01L23/50 主分类号 H01L23/50
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