| 摘要 |
PURPOSE:To obtain a silicon oxide film at a large film-forming speed by retaining a number of bodies to be treated at a retention tool with a space and while they are overlapped and at the same time by supplying monosilane gas and nitrous oxide gas into a reaction pipe at a large flow rate. CONSTITUTION:A heating furnace 2 is placed on a base plate 20 and is constituted by providing a heater 22 on the inner-periphery surface of a heat-insulating layer 21. In a wafer boat 5, an annular placement stand is laid out in parallel with a specific spacing between ceiling and bottom plates, a reverse L-shaped supporting member is provided on the upper surface and a wafer W is placed on the supporting member. First, an atmosphere to be treated within a reaction pipe 3 is heated so that temperature reaches 800 deg.C and a wafer boat 5 retaining the wafer W is carried into the reaction pipe 3 from a lower opening using an elevation stand 43. Then, the flow rate of monosilane gas is set to 50-100cc per minute and the flow rate ratio between monosilane gas and nitrous oxide gas is set to 1:40-1:60 and the pressure within the reaction pipe is set to 0.9-1.5Torr for forming film. |
