| 摘要 |
PURPOSE:To obtain a resist film which is effective for fine processing of a circuit pattern on a silicon substrate, and especially, to improve resolution and reliability of a photolithographic process, to decrease the cost, and to simplify the process. CONSTITUTION:A resist thin film 2 and a photochromic dye coating film 3 are successively formed by LB method on a silicon wafer 1. Then,only the dye coating film 3 is selectively exposed to light and the form of the pattern is inspected with an optical microscope. When the form of the pattern satisfies the requirements, the substrate is subjected to photolithographic process. When the pattern does not satisfy the requirement, the pattern is erased by irradiation with visible rays or heating, and then the photochromic dye thin film 3 is selectively exposed to light again. |
