| 摘要 |
PURPOSE:To provide the optimum material as a holding stage when heat treatment for activation is performed after ions are implanted into a compound semiconductor substrate. CONSTITUTION:A holding stage 3 is constituted of the sintered body such as aluminum nitride. The surface of a compound semiconductor substrate 1, wherein ions are implanted, is brought into tight contact with the sintered body, and heat treatment is performed. Thus, the evaporation of arsenic molecules from the surface of the compound semiconductor substrate 1 is prevented, and the high activating rate is obtained. |
