| 摘要 |
<p>PURPOSE:To improve reliability. CONSTITUTION:The device is provided with an electrically rewritable nonvolatile memory 11, a P channel load transistor 10 which becomes a load, a data line A which reads the information of the memory, a latch circuit 16 which latches the data that are read and an N channel transistor 12 which resets high potential data of the data line employing the signals on the latch circuit. Thus, the high level reading potential of the data line, which becomes a stress on the nonvolatile memory, is reset to a low when the reading is completed. Therefore, the stress imposed on the nonvolatile memory lasts in a very short duration in which a reading signal is on.</p> |
