Method for producing a MOS transistor

摘要

A method is described for producing a MOS transistor, comprising the steps: deposition of an oxide film and of a polysilicon film on a first conducting semiconductor substrate; subjecting the oxide film and the polysilicon film to pattern formation in order to form a gate insulation film and a gate; subjecting the resulting structure to a single-stage thermal treatment under an N2O atmosphere, in order to form a RNO film over the entire surface thereof; implanting a second conducting dopant in the substrate, in order to form high-density source/drain regions, the gate being used as mask; deposition of an oxide film over the entire resulting structure; subjecting the oxide film to anisotropic etching, in order to form RNO side walls and spacers; implanting the second conducting dopant in the substrate, in order to form high-density source/drain regions, the gate and the spacers being used as mask. The method is simplified compared to conventional methods and is therefore economical. Furthermore, the simplified method according to the invention guarantees that a component produced from the RNO film suffers fewer effects due to hot charge carriers. Furthermore, according to the method according to the invention, the operating properties of a component are improved remarkably. The method according to the invention thereby affords the component higher reliability.