Word-line driver circuit for a semiconductor memory device

摘要

Word-line driver circuit for use in a semiconductor device for driving a word line, which is connected to a memory cell, in order to execute a data access operation with regard to the memory cell. The word-line driver circuit in this case includes a field-effect pull-up transistor with isolated gate, which has a gate node which is connected to a series-decoding signal via a field-effect transistor with isolated gate and, furthermore, is connected between a word line and a word-line driver signal with predetermined voltage and, furthermore, has a circuit for providing a transfer amplification signal, which has been generated in response to a predetermined control signal, to the gate terminal of a field-effect transfer transistor with isolated gate, the gate node being precharged to a voltage which lies above the supply voltage, at least before and after the activation of the word-line driver signal.