发明名称 |
Semiconductor device. |
摘要 |
A semiconductor chip (10) comrising a passivation layer (20) of silicon nitride is connected to a lead frame (14) of FeNl or CuFe alloy by metal wires (15) and is covered by a polyimide film (21) of high hardness. The semiconductor device has a reduced sensitivity to the formation of cracks in the passivation layer (20) caused by variations in temperature when the polyimide film (20) has a modulus of eleasticity (E) of at least 1.0.10<1><0>Pa. <IMAGE> <IMAGE> |
申请公布号 |
EP0501564(B1) |
申请公布日期 |
1995.05.10 |
申请号 |
EP19920200462 |
申请日期 |
1992.02.18 |
申请人 |
PHILIPS ELECTRONICS N.V. |
发明人 |
VAN ANDEL, MAARTEN ALEXANDER;GOOTZEN, WILHELMUS FRANCISCUS MARIE |
分类号 |
C08L79/08;H01L21/312;H01L23/29;H01L23/31 |
主分类号 |
C08L79/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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