| 摘要 |
<p>In order for the blocking and the unblocking of the amplifier to be performed in synchronism with the input signal (Vrf) of the amplifier, it is proposed to use the memory effect of the capacitive impedance (C) of the control inputs of each of the two blocking transistors (Q1) of the H bridge: in series with each of the control inputs, a first switch (K1,d1) and a semiconductor element (d2) are arranged in parallel, in such a way that the blocking of the blocking transistor is conditioned by the opening of the first switch (K1,d1) ordered by the blocking signal (Va), and by the direction of the charge carried by the said capacitive impedance (C); a second switch (K2) controlled by the alternations of the input signal (Vrf) allows the first one to be closed, and thus the unblocking of the blocking transistor in question (Q1) only for the alternations which this blocking transistor does not amplify. Application to power amplifier devices. <IMAGE></p> |
