发明名称 |
Thin film semiconductor device for display and method of producing same. |
摘要 |
<p>An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate (0). Pixel electrodes (9) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode (1), an insulating film (2) formed on the gate electrode (1), a polycrystalline semiconductor layer (3) formed on the insulating layer (2), and a high concentration impurity layer constituting a source (4) and a drain (7) formed on the polycrystalline semiconductor layer (3). Further, an NchLDD-TFT thin film transistor for switching has an LDD structure in which a low concentration impurity layer (8) is interposed between the polycrystalline semiconductor layer (3) and the high concentration impurity layer (7). <IMAGE></p> |
申请公布号 |
EP0652595(A2) |
申请公布日期 |
1995.05.10 |
申请号 |
EP19940117355 |
申请日期 |
1994.11.03 |
申请人 |
SONY CORPORATION |
发明人 |
INOUE, YUKO;KINOSHITA, YUKIO;HAYASHI, HISAO |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L27/12 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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