| 摘要 |
A method of forming a radiation-hardened SOI structure comprises forming an oxide layer (42) on a Si substrate (40), implanting ions to form recombination centre-generating impurities within the oxide layer, and bonding a second Si substrate (5) to the oxide layer. This is etched back to a desired thickness to form the SOI structure after annealing the bonded structure at below 850 [deg]C. Also claimed is a method as above in which the (thermal) oxide layer is 4000 Å thick, the second substrate is cleaned before bonding, and is etched back to 70-100 nm thickness. Also claimed is a method as above in which both substrates are oxidised and the oxide layers implanted, and the substrates bonded through the oxides. |
