STRUCTURE FOR USE IN PRODUCING SEMICONDUCTOR DEVICES WITH BURIED CONTACTS AND METHOD FOR ITS PREPARATION.

摘要

An improved structure and method for use in producing semiconductor devices with buried contacts and particularly photovoltaic devices, such as solar cells, that have conductive material (22) in grooves (20) extending inwardly of one major surface (12) of the body (10), the structure having a plurality of trenches (14) formed in the body to a predetermined depth greater than the depth of the conductive grooves (20), which trenches aid in isolating and defining the edges of semiconductor devices or solar cells, and provide means for aiding in the separation of separate semiconductor devices or solar cells from the structure by cutting the structure through the bottom of selected trenches (14).