Method of forming a pattern on a substrate having a step change in height

摘要

A method for forming a pattern improves a profile of a resist pattern. The method forms a photoresist layer on a substrate having a step, and exposes the photoresist layer using a first mask. Then, thick portions of the photoresist layer are exposed using a second mask, and the entire resist is developed. The second mask provides an additional increment of energy to thick regions so that no inadequately exposed resist material will remain near the step.