Charge transfer device wherein the time constant between the clock means and the transfer gate electrodes are substantially equal

摘要

The present invention is directed to a charge transfer device formed on a semiconductor substrate which comprises a channel region formed on the semiconductor substrate, at least a set of transfer gate electrodes formed adjacent to each other and insulated from each other, the set of transfer gate electrode formed over the channel region through an insulating film, clock means for providing the transfer gate electrode with multiple clock pulses, and a plurality of resistors provided between each of the transfer gate electrodes and the clock means, the resistors having respective values corresponding to capacitances of the transfer gate electrodes. Therefore, a transfer efficiency of signal charges can be improved without reducing a maximum amount of signal charges handled by a vertical register.