发明名称 |
Semiconductor device and process for fabricating the same |
摘要 |
A semiconductor device comprising a MIS structure comprising a first electrically conductive film formed on an oxide film, a second electrically conductive film formed on at least a part of said first electrically conductive film, an insulator film formed on said second electrically conductive film, and a third electrically conductive film formed on said insulator film; and at least one electrode contact portion formed on said first electrically conductive film. A semiconductor device comprising a MIS capacitor having a diffusion layer inside the semiconductor substrate as a lower electrode with a first electrically conductive type being isolated using another diffusion layer having the opposite conductive type, and said another diffusion layer having the opposite conductive type being further isolated using a diffusion layer for isolation having the first conductive type and which is earthed. A BiCMOS semiconductor device comprising a resistor and an impurity source for the emitter and the emitter electrode for the bipolar transistor made of a same conductor layer, and further, a same conductor layer is provided as the contact electrode for the resistor and the gate for the MOS transistor. Also claimed are processes for fabricating the aforementioned semiconductor devices.
|
申请公布号 |
US5414291(A) |
申请公布日期 |
1995.05.09 |
申请号 |
US19940189191 |
申请日期 |
1994.01.31 |
申请人 |
SONY CORPORATION |
发明人 |
MIWA, HIROYUKI;SHINOHARA, MAMORU;GOMI, TAKAYUKI;FUJISAWA, TOMOTAKA |
分类号 |
H01L27/06;(IPC1-7):H01L27/02;H01G4/06 |
主分类号 |
H01L27/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|