发明名称 |
Non-volatile random access memory having a high load device |
摘要 |
A non-volatile random access memory comprising a plurality of unit cells each of which includes; a transistor composed of source/drain and gate electrodes, a ferroelectric capacitor connected to either of the source/drain electrodes and a high load device connected to both of the ferroelectric capacitor and the source/drain electrodes being connected to the ferroelectric capacitor.
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申请公布号 |
US5414653(A) |
申请公布日期 |
1995.05.09 |
申请号 |
US19930132292 |
申请日期 |
1993.10.06 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
ONISHI, SHIGEO;ISHIHARA, KAZUYA;TANAKA, KENICHI;SAKIYAMA, KEIZO |
分类号 |
G11C11/22;H01L27/115;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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