发明名称 TFT with reduced parasitic capacitance
摘要 A thin film transistor (TFT) array in an active matrix liquid crystal display (AMLCD) including a centrally located round source electrode substantially completely surrounded by a substantially annular or circular shaped drain electrode. The geometric design of the TFT of this invention provides for a thin film transistor having a reduced parasitic capacitance and decreased photosensitivity. The TFTs of this invention are located at the intersections of gate and drain lines of an active matrix LCD array thereby increasing the size of the pixel display openings of the matrix array.
申请公布号 US5414283(A) 申请公布日期 1995.05.09
申请号 US19930154713 申请日期 1993.11.19
申请人 OIS OPTICAL IMAGING SYSTEMS, INC. 发明人 DEN BOER, WILLEM;YANG, MOHSHI
分类号 G02F1/1368;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L27/01;H01L27/13;H01L29/78 主分类号 G02F1/1368
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