发明名称 |
TFT with reduced parasitic capacitance |
摘要 |
A thin film transistor (TFT) array in an active matrix liquid crystal display (AMLCD) including a centrally located round source electrode substantially completely surrounded by a substantially annular or circular shaped drain electrode. The geometric design of the TFT of this invention provides for a thin film transistor having a reduced parasitic capacitance and decreased photosensitivity. The TFTs of this invention are located at the intersections of gate and drain lines of an active matrix LCD array thereby increasing the size of the pixel display openings of the matrix array.
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申请公布号 |
US5414283(A) |
申请公布日期 |
1995.05.09 |
申请号 |
US19930154713 |
申请日期 |
1993.11.19 |
申请人 |
OIS OPTICAL IMAGING SYSTEMS, INC. |
发明人 |
DEN BOER, WILLEM;YANG, MOHSHI |
分类号 |
G02F1/1368;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L27/01;H01L27/13;H01L29/78 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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