| 摘要 |
PURPOSE:To decrease a specific resistance at a room temp. and to increase a dielectric breakdown voltage by replacing a part of Ba with a prescribed amount of Sr atom and Ca atom and compounding a prescribed amount of an accelerator for semiconductor and a solution phase generating component, etc. CONSTITUTION:Ba atom in the barium titanate based semiconductor porcelain composition having a positive resistance-temp. characteristic is replaced with 1-10mol.% Sr atom and 13-18mol.% Ca atom. Further, 0.22-0.35mol.% at least one kind of element selected from among Bi, Nb, W, Ta, Sb and rare earth elements and 0.05-0.1mol.% Mn are incorporated as the accelerator for semiconductor. Moreover, the solution phase generating component containing at least one of SiO2 and TiO2 is incorporated within the range of 1.5-3.2mol.% in this base composition and the content of SiO2 is adjusted within a range of 0.3-2.3mol.%. In this way, the subject composition low in resistance at a room temp. and having high-dielectric breakdown voltage and does not contain toxic lead is obtained. |
