| 摘要 |
PURPOSE:To obtain a low-resistance ZnSe single crystal by dipping a ZnSe single crystal grown by solid-phase growth in a mixture of molten Zn and molten In, Ga or Al. CONSTITUTION:A ZnSe single crystal 3 grown by solid-phase growth is degreased, cleaned, then etched at 110-115 deg.C for 15min with aq. NaOH, washed with water and dried. The treated ZnSe single crystal 3 is put in a quartz ampule 1 along with a molten mixture 2 of Zn and In where In/Zn=4-50mol% (or Ga and Al) and sealed at about 10<-6>Torr. A quartz presser rod 4 is put in to prevent the floating of the ZnSe single crystal 3. The entire ampule 1 is dipped in the molten mixture 2 at 800-1000 deg.C for several to several hundred hours, and then the ZnSe single crystal 3 is separated. The resistivity of the ZnSe single crystal is lowered to <=10OMEGAcm from >=10<6>OMEGAcm before dipping. |
