发明名称 Heat treatment process for compound semiconductors
摘要 <p>Process for the heat treatment of a compound semiconductor, which process comprises: a heat treatment step, a susceptor which is arranged in such a way on the surface of the compound semiconductor, that they face one another, and a susceptor which comprises a compound of nitrogen and an element of group III.</p>
申请公布号 DE4438398(A1) 申请公布日期 1995.05.04
申请号 DE19944438398 申请日期 1994.10.27
申请人 NEW JAPAN RADIO CO. LTD., TOKIO/TOKYO, JP 发明人 YAMAGA, SHIGEKI, KAMIFUKUOKA, SAITAMA, JP;KIMURA, CHIKAO, KAMIFUKUOKA, SAITAMA, JP
分类号 C04B35/581;C30B33/00;H01L21/26;H01L21/265;H01L21/324;H01L21/683;(IPC1-7):C30B33/02 主分类号 C04B35/581
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