Flash EEPROM memory cell, memory device and method for forming the same

摘要

A flash EEPROM memory cell and a method for forming the same are described. The flash EEPROM memory cell comprises a source; a drain; a gate-insulation layer which is above a channel between the source and the drain; a floating-potential gate electrode which is above the gate-insulation layer and opposite the channel; and a control gate electrode which is above the floating-potential gate electrode on the other side of an intermediate insulation layer. The flash EEPROM memory cell furthermore comprises an erase electrode for connecting at least one side of the floating-potential gate electrode to at least one or more points of the same on the other side of a tunnelling insulation layer.