| 摘要 |
A method for detecting ionizing radiation by allowing the radiation to affect the surface of the floating gate (13) of a MOSFET transistor (10) through an air or gas space. For this purpose, an uncovered area (17) is formed on the surface of the floating gate of the MOSFET transistor forming the detector. The MOSFET transistor is used so that a charge is formed on its floating gate, the charge changing as a result of the ionizing radiation the transistor is exposed to. The radiation dose is determined by the change which takes place in the charge on the gate.
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