| 摘要 |
A method for fabricating a hybrid MQW spatial light modulator is described which comprises steps of depositing on a substrate in sequence a first layer to preselected thickness of n+ (or p+) semiconductor material, a second layer to preselected thickness of intrinsic semiconductor material and a third layer to preselected thickness of p+ (or n+) semiconductor material to form a modulator portion, applying a metallic layer defining a mirrored surface to the third layer of the modulator portion, providing a prefabricated silicon PIN detector having a layered structure including an intrinsic layer of preselected thickness sandwiched between an n+ layer and p+ layer of respective preselected thicknesses and joining the PIN detector to the mirrored surface using a conductive adhesive layer, selectively boring channels into the modulator portion to preselected depth into the PIN detector to form an array of a plurality of pixels on the modulator portion, filling the channels with light blocking material, and applying electrodes to the PIN detector and modulator portion.
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