发明名称 |
Self-aligned complementary HFETS |
摘要 |
Self-aligned HFETS are fabricated by providing a semi-insulating substrate and forming a low bandgap III-V semiconductor layer thereon. A first dielectric layer of a first dielectric material is formed on the III-V layer and first and second openings are formed through the first dielectric layer and the III-V layer. After forming dielectric spacers of a second dielectric material on the sidewalls of the first and second openings, gates are formed therein. The first dielectric layer is subsequently removed and source and drain regions are formed in the III-V layer and substrate adjacent to each of the gates. The formation of the source and drain regions is self-aligned to the gates. After forming isolation regions between devices, ohmic contacts to the source and drain regions, all being of a like material, are formed. This formation is also self-aligned to the gates.
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申请公布号 |
US5411903(A) |
申请公布日期 |
1995.05.02 |
申请号 |
US19930069648 |
申请日期 |
1993.06.01 |
申请人 |
MOTOROLA, INC. |
发明人 |
WU, SCHYI-YI;HUANG, JENN-HWA;PINTCHOVSKI, FAIVEL |
分类号 |
H01L29/812;H01L21/338;H01L21/8252;H01L27/06;(IPC1-7):H01L21/265 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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