| 摘要 |
PURPOSE:To manufacture a semiconductor laser, which a good reproducibility, having a window structure which makes high optical output operation possible. CONSTITUTION:An insulating film 13 having a greater thermal expansion coefficient than a crystal comprising a semiconductor laser is provided on an edge from which a beam of the semiconductor laser having an active layer 3 of a quantum well structure is emitted. This enables pulling stress to be applied to the vicinity of an edge of the laser crystal by the insulating film when a device generates heat due to laser drive, resulting in enlarging effectively a band gap of a region of the active layer subjected to the stress and realizing a window structure. |
