| 摘要 |
<p>The resistor element which is suitable for temps. of up to 1680 degrees C; contains max. 70 vol. % MoSi2 and max. 30 vol. % of silicon carbide or glass to restrict grain growth at high temps. The particles measure less than 1/15th of the dimension across the element, with a max. of 20 micron. SiO2 glass forms a compact surface layer of 1 to 8 micron thickness.</p> |
