发明名称 PAD SWITCHING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 The two column address strobe (CAS) one write enable (WE) mode or the one CAS two WE mode are selected by the pad switching circuit turned on or off by a bonding option. The pad switching circuit comprises a CAS pad switching circuit and a WE pad switching circuit. The CAS pad switching circuit comprises two CAS pad, a CAS pad switch (MN2, MN2) turned on or off according to bonding options, a CAS U buffer (10), and a CAS L buffer (20) connected to CAS U pad or CAS L pad according to the switch status. The WE pad switching circuit comprises two WE pad, a WE pad switch (MN3,MN4) turned on or off according to bonding option, a WEU buffer (30) connected to WE U pad, and a WE L buffer (40) connected to WE U pad or WE L pad according to the switch status.
申请公布号 KR950004557(B1) 申请公布日期 1995.05.02
申请号 KR19920009867 申请日期 1992.06.08
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 KIM, JONG - PIL
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
代理机构 代理人
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