| 摘要 |
<p>PURPOSE:To obviate the generation of hillocks on a surface by adopting a laminated structure composed of a first layer consisting of a low-resistance metal forming scanning lines and recognition signals and a second layer consisting of the oxidized film of the low-resistance metal. CONSTITUTION:The first layer 2 and second layer 3 laminated on a transparent glass substrate 1 are etched by a liquid mixture composed of a nitric acid and hydrofluoric acid. The scanning line in common use as a gate electrode of such a shape as to extend in one way and the recognition mark exclusive of the effective region of the substrate 1 are simultaneously obtd. in this state. The oxidized films are grown in the tapered parts on both flanks of the layer 2. The layer 2 including the tapered parts on both flanks is coated with the oxidized film of the layer 3. The films of an SiNx layer 5 and a semiconductor layer 6 are formed by a plasma CVD method. Further, the film of the SiNx layer is formed as a protective film 7. Pixel display electrodes 9 are then formed and source electrodes 10 and drain electrodes 11 are patterned. The array substrate having thin-film transistors is completed.</p> |
