| 摘要 |
PURPOSE:To enable a capacitor to be lessened in leakage current and enhanced in reliability by a method wherein oxygen defects contained in a dielectric thin film are tapped in a defect introduction layer formed in the surface of the dielectric thin film of perovskite structure through a thermal treatment. CONSTITUTION:When a dielectric thin film 2 of perovskite structure is formed on a first electrode layer, oxygen defects 3 are contained in it. Then, elements not to turn into contaminants are introduced into the surface of the dielectric thin film 2 to form a defect introduction layer 5 having introduced defects 4 on the surface of the thin film 2. Then, a thermal treatment is carried out to move oxygen defects 3 into the defect introduction layer 5, and when the oxygen defects 3 are fixed in the defect introduction layer 5, a non-defect layer 6 is formed. Therefore, a leakage current occurring between a second electrode layer 7 and a first electrode layer 1 can be remarkably lessened when a second electrode layer 7 is formed to constitute a capacitor. By this setup, a semiconductor memory high in reliability can be formed. |
