Semiconductor device with p-n junction based on dopant profile in equilibrium with internal electric field created by this junction

摘要

Self stabilizing concentration profiles are achieved in solids. More particularly, semiconductor devices are made from n- or p-type mercury cadmium telluride (MCT) of the general formula HgxCd1-xTe and especially using Hg0.3Cd0.7Te. Silver, incorporated as a doping impurity or applied as an evaporated spot electromigrates within the MCT to create one or more p-n junctions, usually under the influence of a pulsed positive bias. The resulting concentration profiles of silver and opposing internal electric fields of the p-n junctions achieve a balancing equilibrium that preserves and maintains the stability of the concentration profiles. For the specific telluride composition, indium is the n-type dopant of choice.