发明名称 Scanning electron microscope and method for production of semiconductor device by using the same
摘要 A technique for displaying a scanned specimen image permits non-destructive observation of a surface structure having large or precipitous unevenness, an internal structure of a specimen or a specific structure of a defect or foreign matter, which non-destructive observation has hitherto been considered to be difficult to achieve. The technique can be applied to inspection and measurement so as to economically provide devices and parts of high quality and high reliability. Thus, secondary information such as secondary electrons resulting from interaction of primary information with a specimen, the primary information being generated as a result of interaction of a scanning electron beam with the specimen, is utilized as an image signal to form an image.
申请公布号 US5412210(A) 申请公布日期 1995.05.02
申请号 US19930160336 申请日期 1993.12.02
申请人 HITACHI, LTD. 发明人 TODOKORO, HIDEO;TAKAMOTO, KENJI;OTAKA, TADASHI;MIZUNO, FUMIO;YAMADA, SATORU;KURODA, KATSUHIRO;NINOMIYA, KEN;KURE, TOKUO
分类号 G01B15/04;G01Q30/02;G01Q30/04;G01Q30/12;G01Q30/16;G01Q30/18;G01Q70/00;H01J37/28;H01J37/30;(IPC1-7):H01J37/26 主分类号 G01B15/04
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