| 摘要 |
PURPOSE:To provide a light emitting diode wherein its light emitting output is made large and concurrently its capacity is made small while its high-speed response quality is holding. CONSTITUTION:In the manufacturing method of a light emitting diode wherein first and second p-type GaAlAs layers 2, 3 and an n-type GaAlAs layer 4 are made to grow in succession on a p-type GaAs substrate 1, the second p-type GaAlAs layer 3 is made to grow while Te is added to the melting liquid of its raw material. |
