THERMAL TREATMENT METHOD OF AMORPHOUS SILICON SOLAR CELL

摘要

The heat treatment for enhancement of device efficiency and stabilization of film quality in photoelectric conversion device using amorphous silicon comprises (a) applying reverse bias voltage 0.5-5.0 V to both sides of electrodes of solar cell, i.e. P and N layers to countervail electric field of solar cell itself, (b) heating the solar cell in atmosphere of vacuum, nitrogen or hydrogen gas at 60-150 deg.C for 30-60 min.