发明名称 |
COMPOSITION AND METHOD FOR OFF-AXIS GROWTH SITES ON NONPOLAR SUBSTRATES |
摘要 |
<p>COMPOSITION AND METHOD FOR OFF-AXIS GROWTH SITES ON NONPOLAR SUBSTRATES : Nonpolar substrates comprising off-axis growth regions for the growth of polar semiconductors, and a method for making such substrates, are disclosed. According to the invention, an erodible material, such as a photoresist, is applied to a substrate at a site and is exposed to radiation at that site which has an linear variation in energy at the surface of the erodible material. Due to this variation in exposure energy, a taper results in the erodible material after development. The tapered region is then etched in a manner which etches both the erodible layer and the underlying substrate. The taper in the erodible layer provides a varying attenuation during the etching process such that the taper of the erodible layer is transferred to the substrate.</p> |
申请公布号 |
CA2130739(A1) |
申请公布日期 |
1995.05.02 |
申请号 |
CA19942130739 |
申请日期 |
1994.08.23 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
GOOSSEN, KEITH W.;WALKER, JAMES A. |
分类号 |
C23C14/34;H01L21/027;H01L21/20;H01L21/308;H01L21/336;H01L21/365;H01L29/78;(IPC1-7):H01L21/306;H01L29/12;H01L21/18;H01L21/26 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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