发明名称 COMPOSITION AND METHOD FOR OFF-AXIS GROWTH SITES ON NONPOLAR SUBSTRATES
摘要 <p>COMPOSITION AND METHOD FOR OFF-AXIS GROWTH SITES ON NONPOLAR SUBSTRATES : Nonpolar substrates comprising off-axis growth regions for the growth of polar semiconductors, and a method for making such substrates, are disclosed. According to the invention, an erodible material, such as a photoresist, is applied to a substrate at a site and is exposed to radiation at that site which has an linear variation in energy at the surface of the erodible material. Due to this variation in exposure energy, a taper results in the erodible material after development. The tapered region is then etched in a manner which etches both the erodible layer and the underlying substrate. The taper in the erodible layer provides a varying attenuation during the etching process such that the taper of the erodible layer is transferred to the substrate.</p>
申请公布号 CA2130739(A1) 申请公布日期 1995.05.02
申请号 CA19942130739 申请日期 1994.08.23
申请人 AMERICAN TELEPHONE AND TELEGRAPH COMPANY 发明人 GOOSSEN, KEITH W.;WALKER, JAMES A.
分类号 C23C14/34;H01L21/027;H01L21/20;H01L21/308;H01L21/336;H01L21/365;H01L29/78;(IPC1-7):H01L21/306;H01L29/12;H01L21/18;H01L21/26 主分类号 C23C14/34
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