| 摘要 |
<p>PURPOSE:To clarify the condition to be fulfilled by an absorber with respect to a half-tone reflection mask to be used in lithography using soft X-ray or vacuum UV. CONSTITUTION:When the optical constant of the substance constituting an absorber pattern 3 to be formed on a reflecting film 2 is expressed by 1-delta-ik (delta and (k) are a real number, and (i) is an imaginary unit) and the working wavelength by lambda, 0.29<k/¦delta¦<1.12 holds, and 3lambda/(16¦delta¦)<d<5lambda/(16¦delta¦), where (d) is the thickness of the absorber pattern, is fulfilled.</p> |
