发明名称 SEMICONDUCTOR-DEVICE INSPECTION PROBE
摘要 PURPOSE: To provide a probe structure having a precise pitch by arranging plural cavities whose positions are adjusted to a contact point pad on a device when the probe structure is contacted with a semiconductor device of an inspec tion object, covering them with an elastic thin film, and arranging a conductive projecting part and a lead part on the thin film. CONSTITUTION: A silicon oxide coating film having a thickness of several thousandÅis formed on a silicon substrate 120, and a micropore is formed in a position adjusted to a contact point pad position on an LSI by photolithography. A part just under the micropore is selectively dug down by plasma ethching, and a cavity 140 is formed. Next, a spin coat is performed on the whole by an organic coating film layer 130 having a thickness of severalμm, and a diaphragm is formed on the cavity. Next, a metallic lead 110 is formed, and a metallic projecting contact part 101 is formed by plating. An LSI 200 of an inspection object can be inspected by contacting a contact part 101 with its contact point pad 210 at inspection time.
申请公布号 JPH07113842(A) 申请公布日期 1995.05.02
申请号 JP19930244385 申请日期 1993.09.30
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 HIRANO TOSHIKI;KIMURA ATSUO;MORI SHINICHIRO
分类号 G01R31/26;B81B3/00;G01R1/067;G01R1/073;G01R3/00;H01L21/66;(IPC1-7):G01R31/26 主分类号 G01R31/26
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