发明名称 |
Method of forming a planar thin film transistor |
摘要 |
The disclosure includes preferred semiconductor transistor devices utilizing thin film transistors, as well as preferred methods of forming such devices. Specifically, a bottom thin film transistor gate is formed having a top surface. An insulating filler is provided adjacent the thin film transistor gate to an elevation at least as high as the thin film transistor gate top surface, and subsequently levelled to provide generally planar insulating surfaces adjacent the thin film transistor gate. The planar insulating surfaces are substantially coplanar with the thin film transistor gate top surface. A planar semiconductor thin film is then formed over the thin film transistor gate and over the adjacent planar insulating surfaces. The thin film is doped to form source and drain regions of a thin film transistor which is bottom gated by the thin film transistor gate.
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申请公布号 |
US5411909(A) |
申请公布日期 |
1995.05.02 |
申请号 |
US19930082401 |
申请日期 |
1993.06.23 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MANNING, MONTE;DENNISON, CHARLES |
分类号 |
H01L21/8244;H01L27/11;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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