Method for testing erase characteristics of a flash memory array

摘要

A method of determining erasure characteristics of a nonvolatile semiconductor memory array using an on-board write state machine is described. The method begins by configuring the write state machine to apply a single erase pulse to the array and then issuing an erase command. If array erasure is unsuccessful, another erase command is issued. Erase commands are reissued until every address within the array is successfully erased.