发明名称 Optical waveguide epitaxially grown on semiconductors for upconversion
摘要 A multilayer structure is disclosed which includes a single crystal semiconductor substrate. On the substrate is an epitaxial buffer layer, and on the buffer is an epitaxial fluoride outer layer exhibiting upconversion excitation upon red or infrared irradiation.
申请公布号 US5412679(A) 申请公布日期 1995.05.02
申请号 US19940195239 申请日期 1994.02.14
申请人 EASTMAN KODAK COMPANY 发明人 HUNG, LIANG-SUN;PAZ-PUJALT, GUSTAVO R.
分类号 G02F1/35;G02F2/02;H01S3/063;H01S3/16;H01S5/026;(IPC1-7):H01S3/19 主分类号 G02F1/35
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