发明名称 |
Optical waveguide epitaxially grown on semiconductors for upconversion |
摘要 |
A multilayer structure is disclosed which includes a single crystal semiconductor substrate. On the substrate is an epitaxial buffer layer, and on the buffer is an epitaxial fluoride outer layer exhibiting upconversion excitation upon red or infrared irradiation.
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申请公布号 |
US5412679(A) |
申请公布日期 |
1995.05.02 |
申请号 |
US19940195239 |
申请日期 |
1994.02.14 |
申请人 |
EASTMAN KODAK COMPANY |
发明人 |
HUNG, LIANG-SUN;PAZ-PUJALT, GUSTAVO R. |
分类号 |
G02F1/35;G02F2/02;H01S3/063;H01S3/16;H01S5/026;(IPC1-7):H01S3/19 |
主分类号 |
G02F1/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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