Method for forming a contact in a semiconductor device

摘要

A method for forming a contact in a semiconductor device is disclosed, in which a contact material is brought into contact with a surface of a first conductive film between second conductive film structures which are insulated from the first conductive film and are close to each other. The method comprises the following procedural steps: self-aligned formation of contact between the first conductive film and a first intermediate contact which extends through the second conductive film structure; formation of contact between a second intermediate contact and a predetermined region of the first intermediate contact; formation of a spacer element of conductive film on a sidewall of the second intermediate contact, the intermediate contact being structured; and formation of the contact material on the intermediate contact. Even in the case of a large-scale integrated semiconductor device with a very short separation between the gate electrodes, it is possible to prevent the contact forming a short-circuit with the gate electrode. It is consequently possible to provide a considerable improvement in productivity and in integration scale.