发明名称 Improvements in crystal substrate processing
摘要 This disclosure relates to the fabrication of components on a single crystal substrate. A method is disclosed of overcoming the problems encountered in defining etched features on a silicon substrate. In particular, there is disclosed a method of producing a multichip module comprising a silicon substrate having surface features for the placement of components. An organic dielectric is applied to the substrate prior to the use of an etchant whereby interconnects can be defined. <IMAGE>
申请公布号 GB9505001(D0) 申请公布日期 1995.04.26
申请号 GB19950005001 申请日期 1995.03.11
申请人 NORTHERN TELECOM LIMITED 发明人
分类号 C30B33/08;G02B6/36;G02B6/43;H01L21/306;H01L21/98;H01L23/13;H01L23/14 主分类号 C30B33/08
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