| 摘要 |
A memory device comprises a source (15), a drain (16) coupled to a 2DEG region (13) in a substrate (10) and a gate (5) that includes an array of dot regions (3, 4) each capable of holding a quantised amount of electric charge. A photoconductive region (12) adjacent the array is responsive to incoming radiation to produce charge carriers for establishing a stored charge associated with each dot region. In a write mode, the gate is held at a write voltage Vw to set a charge on the dots and incoming radiation produces a stored charge pattern in the photosensitive region according to the charge of the dots. The level of stored charge is read by detecting peaks in the source-drain current which occur as the gate voltage is swept through a value corresponding to Vw. <IMAGE> |
