| 摘要 |
PURPOSE:To satisfy both enclosure of implanted carriers and reduction of a spreading resistance by providing clad layers of a balanced type semiconductor light emitting element which have a forbidden band width larger than an active layer and composing it out of a multilayer structure of different composition ratios. CONSTITUTION:On an N-GaAs substrate 11, an N-GaAs layer 12, N-GaAlAs clad layers 13, 14 and 15, a P-GaAs active layer 16 and a P-GaAlAs clad layer 17 are grown in the above order by an MOCVD method. The mixed crystal ratio of AlGs of the N-type clad layers 13 and 15 is 0.3-0.45, and the ratio of AlAs of the clad layer 14 is 0.1-0.25. In the LED of such constitution, the N-type clad layers 13-15 are larger than the width of a forbidden band of the active layer 16 so that the emitted light of the active layer 16 is not absorbed in the inside and is extracted. By the action of the clad layer 15, enclosure of the implanted carriers can be effected surely and by the action of the clad layer 14, the reduction of a spreading resistance can be contrived. Accordingly the enhancement of the output of light emitting characteristics can be contrived. |
